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This also means that the inequalities �� find more charge �� integrated over an area S of the electrode) as: i1(t)=Sd��dt=SXe(t)(�Ŧ�0UXe(t)?en0Xe(t))dXe(t)dt (4) Thus, to obtain the direct expression for the i1(t) function, the time dependent variations of the instantaneous positions (Xe(t)) of the extracted charge of surface density en0Xe and the drift velocity dXe(t)/dt should be described. These dependencies are obtained by solving the kinetic equation for drift of carriers (for instance, of electrons): dXedt=?��eE(n0,U,Xe)=?��e12�Ŧ�0(�Ŧ�0XeU?en0(d+Xe)) (5) The last expression for acting electric field is obtained by inserting �� calibrated to U (Equation (2)) into Equation (1). As a current is determined by the changes in time of charge on electrode, the dimensionless instantaneous position �� = Xe/d is essential. Thus, Equation (5) is rearranged as: d��dt=12(1��Mn0(1+��)?1��TOF1��) (6) By integrating Equation (6), the re-arranged expression of function ��(t) is obtained for the range of 0 �� �ס� �� �� and 0 �� t�� �� t. Here, the characteristic time of dielectric relaxation is denoted as ��Mn0 = ��0��/en0��e, and a dimensionless depth of depletion is ��e0 = Xe0/d. The expression of the transit time ��tr is obtained by integrating Equation (6) for the Evodiamine range of 0 �� �ס� �� ��e0 and 0 �� t�� �� ��tr. Both integrals are obtained of the type: ��0��,?��e0�ס�d�ס�ס�2+�ס�?��Mn0��TOF=12��Mn0��0t,?��trdt�� (7) respectively. The solutions of Equation (7) can be expressed through the roots of the denominator function as: �ס�=?1��1+4��Mn0��TOF2 (8) which lead to the transcendental high throughput screening compounds Equation: ��(t)=��+[1?(��(t)+��?��?)?��?��+exp(t2��Mn0(��?��++1))] (9) Finally, by inserting Equation (6) with solutions of the Equation (9) into Equation (4), the initial stage of current pulse is expressed for the time interval 0 �� t �� ��tr as: i1(t)=S�Ŧ�0��(t)dU12��Mn0[1��(t)?��TOF��Mn0��(t)]��[1+��(t)?��Mn0��TOF1��(t)] (10) An identical solution should be obtained by analysis of the hole extraction at the opposite electrode due to correlated, bipolar drift of electrons and holes (Figure 3, Figure 4 and Figure 5). The correlated drift (��tr,e �� ��tr,h = ��b) determines the charge conservation in the system. Possible inequality of carrier mobilities is self-adjusted by different depletion lengths Xe0 �� Xh0 and a shift of a peak within the depth distribution profile of excess carrier concentration (like in the case of ambipolar diffusion with different velocities of surface recombination [42,43,44], a peak is shifted towards a surface of the slower surface recombination).
