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The items to study in this context include polarization effects [16,29], the role of surface Evodiamine termination in its charging and surface conductivity [30,31,32], possibilities of surface passivation [33] and regimes for relevant formation of electrodes [34]. In this work, a few aspects of performance of the capacitor-type detectors made of different technology diamonds have been examined. Profiling of the microwave-probed photoconductivity transients has been performed for evaluation of the lateral distribution of recombination centres and for extraction of carrier recombination lifetimes. The prevailing recombination processes with carrier lifetimes in the range of ��R,HPHT �� 2 Selleck Epigenetics Compound Library ns and significant (>40%) lateral dispersion of these values were revealed in HPHT diamond structures, while considerably longer carrier recombination lifetimes of ��R,CVD �� 110 ns with nearly invariable values over wafer plane were obtained in CVD diamond structures. CVD and HPHT diamond samples, that exhibit considerably different carrier lifetimes, were chosen to analyze detector signals attributed to carrier recombination and drift current components. The dynamics of the polarization effect, which is commonly ascribed to ionized traps [16], have been revealed and their dependence on bias voltage as well as on bulk and localized excess carrier injection regime has been analyzed. This polarization effect appeared to be significant in the range of rather low (BMS-777607 chemical structure geometry of orientations of electric field and excitation beam were thereby combined for versatile examination of the current transients. This enabled us to separate the regimes of prevailing carrier drift, ambipolar diffusion and recombination processes and to evaluate their parameters. The parameters of drift mobility have been evaluated ��e = 4000 cm2/Vs for electrons and ��h = 3800 cm2/Vs for holes, respectively, in CVD diamond using profiling of currents under perpendicular geometry regime.
